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2SB896 |
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| Part Number | 2SB896 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -40V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -0.6(Max.) @IC= -7A ·High speed switching ·100% avalanche tested ·Minimum Lot-to-Lot variatio... |
| Features |
S
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.23A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE1
DC Current Gain
hFE2
DC Current Gain
IC= -7A; IB= -0.23A VCB= -40V; IE= 0 VEB= -5V; IC= 0 IC= -0.1A ; VCE= -2V IC= -2A ; VCE= -2V
COB
Output Capacitance
Switching Times
ton
Turn-on Time
IE= 0; VCB= -10V; f= 1MHz
tstg
Storage Time
IC= -2A; IB1= -IB2= -66mA,
tf
Fall Time
MIN TYP. MAX ... |
| Document |
 2SB896 Data Sheet
PDF 184.54KB |
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Desde 2024. D4U Semiconductor.
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