2SB781 |
Part Number | 2SB781 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Good Linearity of hFE ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliabl... |
Features |
O Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VBE(on)
Base-Emitter On Voltage
IC= -0.5A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -50V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE1
DC Current Gain
IC= -0.5A ; VCE= -5V
hFE2
DC Current Gain
IC= -4A ; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC=-0.5A ; VCE= -10V
MIN TYP. MAX UNIT
-50
V
-1.0
V
-1.0
V
-100 μA
-10 μA
60
320
10
5
MHz
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any tim... |
Document |
2SB781 Data Sheet
PDF 183.72KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB782 |
INCHANGE |
PNP Transistor | |
2 | 2SB783 |
INCHANGE |
PNP Transistor | |
3 | 2SB786 |
INCHANGE |
PNP Transistor | |
4 | 2SB788 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
5 | 2SB789 |
Panasonic Semiconductor |
Silicon PNP Transistor | |
6 | 2SB789A |
Panasonic Semiconductor |
Silicon PNP Transistor |