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2SB638 |
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| Part Number | 2SB638 |
| Manufacturer | INCHANGE |
| Description | ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE =1000 (Min) @ IC = -5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) ·Minimum Lot-to-Lot variations for robust device p... |
| Features |
INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
2SB638
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ; IB= 0
-100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -20mA
-2.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -100mA
-3.0
V
VBE(on) Base-Emitter On voltage
IC= -5A ; VCE= -3V
-2.8
V
ICEO
Collector Cutoff current
ICEX
Collector Cutoff current
IEBO
Emitter Cut-off current
VCE= -100V; IB=0
VCE= -10... |
| Document |
 2SB638 Data Sheet
PDF 180.11KB |
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