TIP120 |
Part Number | TIP120 |
Manufacturer | INCHANGE |
Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ IC... |
Features |
nction to Case
1.92 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
TIP120
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A ,IB= 12mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation voltage IC= 5A ,IB= 20mA
4.0
V
VBE(on)
Base-Emitter On Voltage
IC= 3.0A ; VCE= 3V
2.5
V
... |
Document |
TIP120 Data Sheet
PDF 209.82KB |
Distributor | Stock | Price | Buy |
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