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MJE18006 |
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| Part Number | MJE18006 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 2... |
| Features |
Silicon NPN Power Transistor
MJE18006
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(sat)-1 Base-Emitter Saturation Voltage
CONDITIONS
IC= 30mA; IB= 0
IC= 1.5 A ;IB= 0.15A TC=125℃ IC= 3A ;IB= 0.6A TC=125℃
IC= 1.5A; IB= 0.15A
MIN TYP MAX UNIT
450
V
0.6 0.65
V
0.7 0.8
V
1.2
V
VBE(sat)-2 Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IC= 3A; IB= 0.6A
VCES=RatedVCES; VEB= 0 TC=125℃
VCE... |
| Document |
 MJE18006 Data Sheet
PDF 212.33KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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