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MJE18002 |
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| Part Number | MJE18002 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 22... |
| Features |
icon NPN Power Transistor
MJE18002
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA; IB=0
VCE(sat)-1 VCE(sat)-2
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
IC= 0.4 A ;IB= 40mA TC=125℃
IC= 1A ;IB= 0.2 A TC=125℃
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 0.4A; IB= 40mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 1000V,IE=0; TC=125℃
IC... |
| Document |
 MJE18002 Data Sheet
PDF 211.77KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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