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3DD3997 |
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| Part Number | 3DD3997 |
| Manufacturer | INCHANGE |
| Description | ·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1200V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High fre... |
| Features |
E(sat) Collector-Emitter Saturation Voltage IC= 20A; IB=4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 20A; IB=4A
ICEO
Collector Cutoff Current
VCE= 800V; IB= 0
ICBO
Collector Cutoff Current
VCB= 1200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 20A; VCE= 5V
3DD3997
MIN TYP. MAX UNIT
800
V
1.8
V
1.5
V
50 μA
10 μA
10 μA
10
30
3
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only... |
| Document |
 3DD3997 Data Sheet
PDF 208.30KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD3010A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 2 | 3DD3015A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 3 | 3DD3015A1-H |
Huajing Microelectronics |
Silicon NPN bipolar transistor |
|
| 4 | 3DD3015A3 |
Huajing Microelectronics |
Silicon NPN Transistor |
|
| 5 | 3DD301B |
Inchange |
Silicon Power Transistor |
|
| 6 | 3DD301C |
Inchange |
Silicon Power Transistor |
|
Desde 2024. D4U Semiconductor.
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