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3DD15D |
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| Part Number | 3DD15D |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min.) ·DC Current Gain- : hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot var... |
| Features |
TICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO
Collector Cutoff Current
VCE= 50V; IB=0
ICBO
Collector Cutoff Current
VCB= 150V; IE=0
hFE
DC Current Gain
IC= 2A; VCE= 10V
tf
Fall Time
IC= 3A; IB1= 0.2A, IB2= -0.3A,
3DD15D
MIN MAX UNIT
200
V
300
V
5
V
1.5
V
1.0 mA
0.5 mA
30 250
1.0 μs
NOTICE： ISC reser... |
| Document |
 3DD15D Data Sheet
PDF 202.12KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD15 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 3DD1545 |
Huajing Microelectronics |
NPN Transistor |
|
| 3 | 3DD155 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 3DD1555 |
JILIN SINO |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 5 | 3DD1555A |
JILIN SINO |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 6 | 3DD1555P |
JILIN SINO |
CASE-RATED BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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