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2N6355 |
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| Part Number | 2N6355 |
| Manufacturer | INCHANGE |
| Description | ·High DC current gain : hFE= 500(Min)@ IC= 4A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB= 40mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=20A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC=20A; IB= 1A
VBE(on) Base-Emitter On Voltage
IC= 10A ; VCE= 4V
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
ICEO
Collector Cutoff Current
VCE= 40V; IB=0
ICBO
Collector Base Cutoff Current
VCB=50V; IE= 0
hFE-1
DC Current Gain
IC= 4A; VCE= 5V
hFE-2
DC Current Gain
IC= 20A; VCE= 5V
2N6355
MIN ... |
| Document |
 2N6355 Data Sheet
PDF 183.59KB |
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Desde 2024. D4U Semiconductor.
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