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2N6102 |
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| Part Number | 2N6102 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain - : hFE = 20-80@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ... |
| Features |
c Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A
VBE(on) Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IC= 8A ; VCE= 4V
VCE= 45V; VBE= -1.5V VCE= 40V; VBE= -1.5V;TC=150℃
VCE= 40V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 8A ; VCE= 4V
hFE-2
DC Current Gain
IC= 16A ; VCE= 4V
2N6102
MIN MAX UNIT
40
V
2.5
V... |
| Document |
 2N6102 Data Sheet
PDF 184.04KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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