BU526 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BU526

INCHANGE
BU526
BU526 BU526
zoom Click to view a larger image
Part Number BU526
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 400V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT...
Features CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB=0 V(BR)CER Collector-Emitter Breakdown Voltage IC= 0.5mA; RBE≤ 100Ω V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 3A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current hFE-1 DC Current Gain IC= 6A; IB= 1.25A VCE=900V; VBE= 0; VCE=900V; VBE= 0; TC= 150℃ IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 4A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 1...

Document Datasheet BU526 Data Sheet
PDF 201.88KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BU52001GUL
Rohm
Omnipolar Detection Hall Datasheet
2 BU52002GUL
Rohm
Unipolar Detection Hall Datasheet
3 BU52003GUL
Rohm
Unipolar Detection Hall Datasheet
4 BU52004GUL
Rohm
Omnipolar Detection Hall Datasheet
5 BU52011HFV
Rohm
Omnipolar Detection Hall Datasheet
6 BU52012HFV
Rohm
Unipolar Detection Hall Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad