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BU506F |
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| Part Number | BU506F |
| Manufacturer | INCHANGE |
| Description | ·High Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV re... |
| Features |
sc Silicon NPN Power Transistor
BU506F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.33A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB= 1.33A
VCE= VCESmax; VBE= 0 VCE= VCESmax; VBE= 0;TJ= 125℃
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A ; VCE= 5V
Switching Times; Resistive load
tstg
Storage Time
tf
Fall Time
IC= 3A , IB(end)= 1A; LB= 12μH
MIN TYP... |
| Document |
 BU506F Data Sheet
PDF 207.70KB |
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