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BU506DF |
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| Part Number | BU506DF |
| Manufacturer | INCHANGE |
| Description | ·High Voltage ·High Switching Speed ·Built-in Integrated Efficiency Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizon... |
| Features |
sc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BU506DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.33A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; IB= 1.33A
VCE= VCESmax; VBE= 0 VCE= VCESmax; VBE= 0;TJ= 125℃
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 3A ; VCE= 5V
Switching times; Resistive load
tstg
Storage Time
tf
Fall Time
... |
| Document |
 BU506DF Data Sheet
PDF 210.00KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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