BU500 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BU500

INCHANGE
BU500
BU500 BU500
zoom Click to view a larger image
Part Number BU500
Manufacturer INCHANGE
Description ·High Voltage-VCEX= 1500V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 4.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·De...
Features TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 4.5A; VCE= 2V VCB= 1000V; IE= 0 VCB= 1300V; IE= 0 VEB= 4V; IC= 0 hFE DC Current Gain IC= 4.5A; VCE= 5V Switching Times ts Storage Time tf Fall Time IC= 4.5A; IB1= -IB2= 1.5A; VCC= 100V BU500 MIN TYP. MAX UNIT 700 V 5 V 1.0 V ...

Document Datasheet BU500 Data Sheet
PDF 201.71KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BU500
Motorola Inc
NPN SILICON POWER METAL TRANSISTOR Datasheet
2 BU500
Toshiba
Silicon NPN Transistor Datasheet
3 BU500
SavantIC
SILICON POWER TRANSISTOR Datasheet
4 BU5027A
Jingdao
NPN Transistor Datasheet
5 BU5027AF
Jingdao
Bipolar Junction Transistor Datasheet
6 BU5027S
Jingdao
Bipolar Junction Transistor Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad