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BDX54 |
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| Part Number | BDX54 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(sus)= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -3A ·Low Collector Saturation Voltage : VCE(sat) = -2.0 V(Max) @ IC = -3.0 A ·Complement to Typ... |
| Features |
semi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -12mA
ICBO
Collector Cutoff Current
VCB= -45V; IE= 0
ICEO
Collector Cutoff Current
VCE= -22V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -3A ; VCE= -3V
BDX54
MIN TYP. MAX UNIT
-45
... |
| Document |
 BDX54 Data Sheet
PDF 211.37KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX53 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 2 | BDX53 |
Bourns Electronic Solutions |
NPN SILICON POWER DARLINGTONS |
|
| 3 | BDX53 |
TRANSYS |
NPN Transistor |
|
| 4 | BDX53 |
INCHANGE |
NPN Transistor |
|
| 5 | BDX53 |
Comset Semiconductors |
SILICON POWER DARLINGTON TRANSISTORS |
|
| 6 | BDX53 |
SavantIC |
Silicon NPN Power Transistors |
|
| 7 | BDX53A |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 8 | BDX53A |
TRANSYS |
NPN Transistor |
|
| 9 | BDX53A |
INCHANGE |
NPN Transistor |
|
| 10 | BDX53A |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
Desde 2024. D4U Semiconductor.
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