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BDX34 |
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| Part Number | BDX34 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -45V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -2.5V(Max.)@ IC= -4A ·Complement to Type BDX3... |
| Features |
℃/W
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -8mA
VBE(on) Base-Emitter On Voltage
IC= -4A ; VCE= -3V
ICBO
Collector Cutoff Current
VCB= -45V; IE= 0
ICEO
Collector Cutoff Current
VCE= -22V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -4A; VCE= -3V
BDX34
MIN TYP. MAX UNIT
-45
V
-2.5
V
-2... |
| Document |
 BDX34 Data Sheet
PDF 211.45KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX30 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
|
| 2 | BDX33 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
|
| 3 | BDX33 |
CDIL |
NPN/PNP PLASTIC POWER TRANSISTORS |
|
| 4 | BDX33 |
MCC |
NPN Silicon Power Darlingtons |
|
| 5 | BDX33 |
Bourns Electronic Solutions |
NPN Transistor |
|
| 6 | BDX33 |
Micro Commercial Components |
NPN Silicon Power Darlingtons |
|
Desde 2024. D4U Semiconductor.
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