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BDX66C |
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| Part Number | BDX66C |
| Manufacturer | INCHANGE |
| Description | ·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
i.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
BDX66/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX66
-60
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDX66A BDX66B
IC= -50mA ;IB=0
-80 -100
V
BDX66C
-120
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA
-2
V
VBE(on) Base-Emitter On Voltage
IC= -10A ; VCE= -3V
-2.5 V
VECF
C-E Diode Forward Voltage
IF= -10A
-2
V
ICEO
Collector Cutoff Current
VCE= 1/2VCEOmax; IB= 0
-1 mA
BDX66
VCB= ... |
| Document |
 BDX66C Data Sheet
PDF 209.00KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX66 |
Seme LAB |
Bipolar PNP Device |
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| 2 | BDX66 |
INCHANGE |
PNP Transistor |
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| 3 | BDX66 |
SavantIC |
SILICON POWER TRANSISTOR |
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| 4 | BDX66 |
TT |
PNP DARLINGTON SILICON POWER TRANSISTOR |
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| 5 | BDX66 |
Comset Semiconductors |
PNP SILICON DARLINGTONS POWER TRANSISTOR |
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| 6 | BDX66A |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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