BDW73A |
Part Number | BDW73A |
Manufacturer | INCHANGE |
Description | ·Collector Current -IC= 8A ·High DC Current Gain-hFE= 750(Min.)@ IC= 3A ·Complement to Type BDW74/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... |
Features |
/W
Rth j-c Thermal Resistance, Junction to Case 62.5 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW73
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDW73A BDW73B IC= 30mA; IB=0 BDW73C
BDW73D
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 3V
VECF
C-E Diode Forward Voltage
IF= 8A
BDW73
VCE... |
Document |
BDW73A Data Sheet
PDF 212.53KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | BDW73 |
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NPN SILICON POWER DARLINGTON | |
2 | BDW73 |
INCHANGE |
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3 | BDW73A |
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4 | BDW73B |
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5 | BDW73B |
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6 | BDW73C |
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