BDW64A |
Part Number | BDW64A |
Manufacturer | INCHANGE |
Description | ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min.)@ IC= -2A ·Complement to Type BDW63/A/B/C/D ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
Features |
e
Rth j-c Thermal Resistance, Junction to Case
MAX 2.08 62.5
UNIT ℃/W ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDW64
V(BR)CEO
Collector-Emitter Breakdown Voltage
BDW64A BDW64B IC= -30mA; IB= 0 BDW64C
BDW64D
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -3V
VECF
C-E Diode Forward ... |
Document |
BDW64A Data Sheet
PDF 215.73KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BDW64 |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS | |
2 | BDW64 |
INCHANGE |
PNP Transistor | |
3 | BDW64A |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS | |
4 | BDW64B |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS | |
5 | BDW64B |
INCHANGE |
PNP Transistor | |
6 | BDW64C |
Power Innovations Limited |
PNP SILICON POWER DARLINGTONS |