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BDT42BF |
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| Part Number | BDT42BF |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42F; -60V(Min)- BDT42AF -80V(Min)- BDT42BF; -100V(Min)- BDT42CF ·Complement to Type BDT41F... |
| Features |
ermal Resistance,Junction to Case
MAX UNIT 6.3 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
BDT42F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT42F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT42AF BDT42BF
IC= -30mA; IB= 0
BDT42CF
VCE(sat) Collector-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
VBE(on) Base-Emitter On Voltage
IC= -6A ; VCE= -4V
ICES
Collector Cutoff Current
VCE= VCEOmax; VBE= 0
ICEO
Collector Cutoff Current
BDT42F/AF VCE= -30V; IB= ... |
| Document |
 BDT42BF Data Sheet
PDF 212.33KB |
Desde 2024. D4U Semiconductor.
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