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BDT42B |
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| Part Number | BDT42B |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT42; -60V(Min)- BDT42A -80V(Min)- BDT42B; -100V(Min)- BDT42C ·Complement to Type BDT41/A/B/... |
| Features |
nce,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 1.92 70
UNIT ℃/W ℃/W
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isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT42
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT42A BDT42B
IC= -30mA; IB= 0
BDT42C
VCE(sat) Collector-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
VBE(on) ICES
Base-Emitter On Voltage Collector Cutoff Current
IC= -6A ; VCE= -4V VCE= VCEOmax; VBE= 0
BDT42/A VCE= -30V; IB= 0
ICEO
Coll... |
| Document |
 BDT42B Data Sheet
PDF 212.12KB |
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