Busque con el número de pieza junto con el fabricante o la descripción
BDT41B |
Click to view a larger image
| Part Number | BDT41B |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C ·Complement to Type BDT42/42A/42B/4... |
| Features |
o Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 1.92 70
UNIT ℃/W ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT41
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT41A BDT 41B
IC= 30mA; IB= 0
BDT 41C
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(on) Base-Emitter On Voltage
IC= 6A ; VCE= 4V
ICES
Collector Cutoff Current
VCE= VCEOmax; VBE= 0
BDT41/A VCE= 30V; IB= 0
ICEO
Collector Cutoff Curr... |
| Document |
 BDT41B Data Sheet
PDF 210.38KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|