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BDT32AF |
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| Part Number | BDT32AF |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF ·Compl... |
| Features |
Tstg
Storage Ttemperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150 ℃ MAX UNIT
Rth j-c Rth j-a
Thermal Resistance,Junction to Case
8.12 ℃/W
Thermal Resistance,Junction to Ambient 55 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
BDT32F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDT32F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT32AF BDT32BF BDT32CF
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage
BDT32DF
BDT32F/AF/BF/C F BDT32DF
Base-Emitte... |
| Document |
 BDT32AF Data Sheet
PDF 213.42KB |
Desde 2024. D4U Semiconductor.
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