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BDT32C |
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| Part Number | BDT32C |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C ·Complement to Type BDT31/A/B/... |
| Features |
AX
Rth j-c Thermal Resistance,Junction to Case
3.12
Rth j-a Thermal Resistance,Junction to Ambient 70
℃
UNIT ℃/W ℃/W
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isc Silicon PNP Power Transistors
BDT32/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT32
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT 32A BDT 32B
IC= -30mA; IB= 0
BDT 32C
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A
VBE(on) ICES
Base-Emitter On Voltage Collector Cutoff Current
IC= -3A ; VCE= -4V VCE= VCEOmax; VB... |
| Document |
 BDT32C Data Sheet
PDF 228.12KB |
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