Busque con el número de pieza junto con el fabricante o la descripción
BDT31B |
Click to view a larger image
| Part Number | BDT31B |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C ·Complement to Type BDT32/A/B/C ·Mi... |
| Features |
nce,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 3.12 70
UNIT ℃/W ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistors
BDT31/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT31
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT 31A BDT 31B
IC= 30mA; IB= 0
BDT 31C
VCE(sat) Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.375A
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 4V
ICES
Collector Cutoff Current
VCE= VCEOmax; VBE= 0
BDT31/A VCE= 30V; IB=... |
| Document |
 BDT31B Data Sheet
PDF 207.76KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|