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BDT30F |
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| Part Number | BDT30F |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF ·Compl... |
| Features |
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 9.17 55
UNIT ℃/W ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
BDT30F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT30F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT30AF BDT30BF BDT30CF
IC= -30mA; IB= 0
BDT30DF
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage IC= -1... |
| Document |
 BDT30F Data Sheet
PDF 210.90KB |
Desde 2024. D4U Semiconductor.
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