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BDT30B |
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| Part Number | BDT30B |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C ·Complement to Type BDT29/A/B/... |
| Features |
RAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
4.17 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT30
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT30A BDT30B
IC= -30mA; IB= 0
BDT30C
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A
Base-Emitter On Voltage
IC= -1A ; VCE= -4V
ICES
Collector Cutoff Current
VCE= VCEOmax; VBE= 0
... |
| Document |
 BDT30B Data Sheet
PDF 210.69KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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