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BD933F |
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| Part Number | BD933F |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934F/936F/938F/940F/942F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f... |
| Features |
Case
4.17 ℃/W
Thermal Resistance,Junction to Ambient 55 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD933F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD935F BD937F IC= 30mA ; IB= 0 BD939F
BD941F
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) ICBO ICEO
Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current
IC= 1A; VCE= 2V
VCB= VCBOmax; IE= 0 VCB= VCBOmax; I... |
| Document |
 BD933F Data Sheet
PDF 209.63KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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