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BD810 |
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| Part Number | BD810 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain - : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) ·Complement to Type BD809 ·Minimum Lot-to-Lot variations for robust device performance and reliable ... |
| Features |
less otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VBE(on) Base-Emitter On Voltage
IC= -4A ; VCE= -2V
ICBO
Collector Cutoff Current
VCB= -80V;IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2A ; VCE= -2V
hFE-2
DC Current Gain
IC= -4A ; VCE= -2V
fT
Current-Gain—Bandwidth Product IC= -1.0A ; VCE= -10V; ftest= 1.0MHz
BD810
MIN MAX UNIT
-80
V
-1.1
V
-1.6
V
-1.0 mA
-2.0 mA
30
15
1.5
MHz
NOTICE： ISC reserve... |
| Document |
 BD810 Data Sheet
PDF 208.66KB |
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Desde 2024. D4U Semiconductor.
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