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BD802 |
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| Part Number | BD802 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Saturation Voltage ·Complement to Type BD801 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
| Features |
k
isc Silicon PNP Power Transistor
BD802
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
-100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
-1
V
VBE(on) Base-Emitter On Voltage
IC= -3A ; VCE= -2V
-1.6 V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
-0.1 mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-1 mA
hFE-1
DC Current Gain
IC= -1A ; VCE= -2V
30
hFE-2
DC Current Gain
IC= -3A ; VCE= -2V
15
fT
Current-Gain—Bandwidth... |
| Document |
 BD802 Data Sheet
PDF 207.60KB |
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Desde 2024. D4U Semiconductor.
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