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BD801 |
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| Part Number | BD801 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Saturation Voltage ·Complement to Type BD802 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP... |
| Features |
Silicon NPN Power Transistor
BD801
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
100
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
1
V
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 2V
1.6
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 2V
30
hFE-2
DC Current Gain
IC= 3A ; VCE= 2V
15
fT
Current-Gain—Bandwidth Product IC= 0.25A ;... |
| Document |
 BD801 Data Sheet
PDF 205.13KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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