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BD725 |
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| Part Number | BD725 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 120V(Min) ·Complement to type BD726 ·Minimum Lot-to-Lot variations for robust device performance and reliable o... |
| Features |
Silicon NPN Power Transistor
BD725
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
1.0
V
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 4V
1.4
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0 VCB= 60V; IE= 0; TC= 150℃
50 μA
1
mA
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.2 mA
hFE-1
DC Current Gain
IC= 0.5A; VCE= 4V
40
hF... |
| Document |
 BD725 Data Sheet
PDF 203.70KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BD720 |
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| 2 | BD720 |
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| 3 | BD721 |
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| 4 | BD722 |
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| 6 | BD723 |
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Desde 2024. D4U Semiconductor.
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