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BD158 |
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| Part Number | BD158 |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
| Features |
stor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 325V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 50m A; VCE= 10V
BD158
MIN MAX UNIT
300
V
325
V
5
V
1.0
V
0.1
mA
0.1
mA
30
240
NOTICE： ISC reserves the rights to... |
| Document |
 BD158 Data Sheet
PDF 201.81KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD157 |
Motorola Inc |
Plastic Medium Power NPN Silicon Transistor |
|
| 2 | BD157 |
Fairchild Semiconductor |
NPN Epitxial Silicon Transistor |
|
| 3 | BD157 |
INCHANGE |
NPN Transistor |
|
| 4 | BD158 |
Fairchild Semiconductor |
NPN Epitxial Silicon Transistor |
|
| 5 | BD158 |
Motorola Inc |
Plastic Medium Power NPN Silicon Transistor |
|
| 6 | BD159 |
ON Semiconductor |
POWER TRANSISTOR NPN SILICON |
|
Desde 2024. D4U Semiconductor.
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