Busque con el número de pieza junto con el fabricante o la descripción
2SD2300 |
Click to view a larger image
| Part Number | 2SD2300 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Minimum Lot-to-Lot variations for robust device... |
| Features |
200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 1.2A
ICES
Collector Cutoff Current
VCE= 1500V; RBE= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 6A
tf
Fall Time
IC= 4A; IB1= 0.8A; IB2≈ -1.5A
2SD2300
MIN TYP. MAX UNIT
6
V
5.0
V
1.5
V
0.5 mA
20
3.0
V
1.0 μs
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications ... |
| Document |
 2SD2300 Data Sheet
PDF 194.75KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD2300 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SD2300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD2318 |
Rohm |
High-current gain Power Transistor |
|
| 4 | 2SD2318F5 |
Rohm |
Triple Diffused Planar NPN Silicon Transistor |
|
| 5 | 2SD2321 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SD2324 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
|