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2SD2000 |
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| Part Number | 2SD2000 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High Speed Switching ·Good Linearity of hFE ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
tage IC= 25mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 4V
hFE-2
DC Current Gain
IC= 4A; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 12V; f= 10MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
VCC= 50V, IC= 4A; IB1= IB2= 0.4A
tf
Fall Time
MIN TYP. MAX UNIT
60
V
1.5
V
2.0
V
100 μA
100 μA
70
250
20
80
MHz
0.3
μs
1.0
μs
0.2
μs
hFE-1 C... |
| Document |
 2SD2000 Data Sheet
PDF 210.86KB |
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