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2SD1881 |
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| Part Number | 2SD1881 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1300V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
ICES
Collector Cutoff Current
VCE= 1300V ; RBE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 10A
IC= 6A , IB1= 1.2A ; IB2= -2.4A PW=20μs; Duty Cycle≤1%
2SD1881
MIN TYP. MAX UNIT
800
V
5.0
V
1.5
V
10 μA
1.0 mA
40
130 mA
8
5
10
2.0
V
0.3 μs
NOTICE： ISC reserves the rights ... |
| Document |
 2SD1881 Data Sheet
PDF 211.29KB |
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Desde 2024. D4U Semiconductor.
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