2SD1877 INCHANGE NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SD1877

INCHANGE
2SD1877
2SD1877 2SD1877
zoom Click to view a larger image
Part Number 2SD1877
Manufacturer INCHANGE
Description ·High Breakdown Voltage- VCBO= 1300V (Min) ·High Speed Switching ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO...
Features llector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1300V ; RBE= 0 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain VECF C-E Diode Forward Voltage tf Fall Time VEB= 4V ; IC= 0 IC= 0.5A ; VCE= 5V IC= 2.5A ; VCE= 5V IF= 4A IC= 3A , IB1= 0.8A ; IB2= -1.6A 2SD1877 MIN TYP. MAX UNIT 800 V 5.0 V 1.5 V 10 μA 1.0 mA 40 130 mA 8 3.5 7 2.0 V 0.3 μs NOTICE: ISC reserves the rights to make changes of th...

Document Datasheet 2SD1877 Data Sheet
PDF 211.17KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SD1875
UTC
NPN EPITAXIAL SILICON TRANSISTOR Datasheet
2 2SD1876
Sanyo Semicon Device
NPN Triple Diffused Planar Silicon Transistor Datasheet
3 2SD1876
INCHANGE
NPN Transistor Datasheet
4 2SD1876
SavantIC
SILICON POWER TRANSISTOR Datasheet
5 2SD1877
SavantIC
SILICON POWER TRANSISTOR Datasheet
6 2SD1878
Sanyo Semicon Device
NPN Triple Diffused Planar Silicon Transistor Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad