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2SD1506 |
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| Part Number | 2SD1506 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 2A ·Wide Area of Safe Operation ·Complement to Type 2SB1065 ·Minimum Lot-to-Lot variations for robust device performance and reliable operat... |
| Features |
(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 3V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
COB
Output Capacitance
IE=0; VCB= 10V; f= 1MHz
hFE Classifications N P Q R 56-120 82-180 120-270 180-390 2SD1506 MIN TYP. MAX UNIT 50 V 60 V 5 V 1.0 ... |
| Document |
 2SD1506 Data Sheet
PDF 208.74KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1500 |
Inchange Semiconductor |
Power Transistor |
|
| 2 | 2SD1503 |
INCHANGE |
NPN Transistor |
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| 3 | 2SD1504 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SD1505 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD1505 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD1506 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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