2SD1344 |
Part Number | 2SD1344 |
Manufacturer | INCHANGE |
Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for... |
Features |
EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
VECF
C-E Diode Forward Voltage
tf
Fall Time
IF= 6A
IC= 5A, IB1= 1A, IB2= 2A; VCC= 200V
2SD1344
MIN TYP. MAX UNIT
1500
V
800
V
7
V
5.0
V
1.5
V
10 μA
40
130 mA
8
2.0
V
0.7 μs
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any tim... |
Document |
2SD1344 Data Sheet
PDF 201.08KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1340 |
Inchange Semiconductor |
Silicon NPN Transistor | |
2 | 2SD1341P |
Sanyo Semicon Device |
NPN Transistor | |
3 | 2SD1342 |
Inchange Semiconductor |
Silicon NPN Transistor | |
4 | 2SD1344 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1345 |
Inchange Semiconductor |
Power Transistor | |
6 | 2SD1347 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistors |