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2SD970 |
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| Part Number | 2SD970 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Saturation Voltage ·Complement to Type 2SB791 ·Minimum Lot-to-Lot variations for robust ... |
| Features |
(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA
3.0
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 4A; IB= 8mA
2.0
V
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= 8A; IB= 80mA
2.5
V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
100 μA
ICEO
Collector Cutoff Current
VCE= 100V; RBE= ∞
10
μA
hFE
DC Current Gain
IC= 4A ; VCE= 3V
1000
20000
Switching t... |
| Document |
 2SD970 Data Sheet
PDF 206.55KB |
Similar Datasheet
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| 2 | 2SD970 |
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Desde 2024. D4U Semiconductor.
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