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2SD745 |
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| Part Number | 2SD745 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Complement to Type 2SB705 ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... |
| Features |
mitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 50mA; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 0.2A; VCE= 5V
hFE-2 Classifications S R Q 40-80 60-120 100-200 2SD745 MIN TYP. MAX UNIT 1.5 V 2.0 V 50 μA 50 μA 20 55 40 80 200 270 pF 15 MHz NOTICE： ISC reserves the rights to make changes of the ... |
| Document |
 2SD745 Data Sheet
PDF 214.14KB |
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Desde 2024. D4U Semiconductor.
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