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2SD743 |
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| Part Number | 2SD743 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 40~200 @IC= 0.5A ·Complement to Type 2SB703 ·Minimum Lot-to-Lot variations for robust device performance and reliabl... |
| Features |
D743
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
80
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
2.0
V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 20mA; V... |
| Document |
 2SD743 Data Sheet
PDF 210.47KB |
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