Busque con el número de pieza junto con el fabricante o la descripción
2SD389 |
Click to view a larger image
| Part Number | 2SD389 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Wide Area of Safe Operation ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
| Features |
tter On Voltage
IC= 1A; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A; VCE= 3V
hFE-2
DC Current Gain
IC= 1A; VCE= 3V
hFE-2 Classifications Q P O 30-60 50-100 80-160 2SD389 MIN TYP. MAX UNIT 60 V 1.0 V 1.4 V 30 μA 1.0 mA 40 30 60 160 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usag... |
| Document |
 2SD389 Data Sheet
PDF 207.90KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD380 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SD381 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SD381 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SD382 |
NEC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SD382 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SD386 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Type Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
|