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2SC4075 |
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| Part Number | 2SC4075 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for ... |
| Features |
IC= 1mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 10mA; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 50V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 10mA; VCE= 30V
hFE Classifications C D E 40-80 60-120 100-200 2SC4075 MIN TYP. MAX UNIT 300 V 2.0 V 0.1 μA 0.1 μA 40 200 5.3 pF 50 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informatio... |
| Document |
 2SC4075 Data Sheet
PDF 211.91KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4073 |
Sanken electric |
Silicon NPN Transistor |
|
| 2 | 2SC4073 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC4073 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC4075 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 5 | 2SC4075 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC400 |
Toshiba |
SILICON PNP TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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