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2SC3090 |
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| Part Number | 2SC3090 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : V(BR)CBO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desi... |
| Features |
Voltage IC= 5mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
ICBO
Collector Cutoff Current
VCB= 500V; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1.2A; VCE= 5V
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest=1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1.2A; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Sto... |
| Document |
 2SC3090 Data Sheet
PDF 198.71KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3090 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC3090 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3092 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3092 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3093 |
ETC |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC3094 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
Desde 2024. D4U Semiconductor.
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