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2SC3063 |
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| Part Number | 2SC3063 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL... |
| Features |
IC= 0.1mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA
VBE(on) Base-Emitter On Voltage
IC= 30mA; VCE= 10V
hFE
DC Current Gain
IC= 5mA; VCE= 50V
fT
Current-Gain—Bandwidth Product
IE= -20mA; VCE= 30V
COB
Output Capacitance
IE= 0; VCB= 30V, ftest= 1MHz
2SC3063
MIN TYP. MAX UNIT
300
V
300
V
7
V
1.5
V
1.2
V
50
250
70
MHz
2.4
pF
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is prese... |
| Document |
 2SC3063 Data Sheet
PDF 187.64KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3060 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3060 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3061 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3061 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3063 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC3063 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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