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2SC3047 |
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| Part Number | 2SC3047 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
ICBO
Collector Cutoff Current
VCB= 850V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1A, IB1= 0.1A; IB2= -0.2A;... |
| Document |
 2SC3047 Data Sheet
PDF 191.47KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3040 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC3040 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3040 |
SavantIC |
Silicon power Transistor |
|
| 4 | 2SC3041 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3041 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC3042 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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