2SC3042 |
Part Number | 2SC3042 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI... |
Features |
down Voltage IC= 10mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.6A
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1.6A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1.6A; VCE= 10V
COB
Output Capacitance
VCB= 10V; ftest= 1.0MHz
Switching times
ton
Turn-on Time
tstg
S... |
Document |
2SC3042 Data Sheet
PDF 216.07KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3040 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
2 | 2SC3040 |
INCHANGE |
NPN Transistor | |
3 | 2SC3040 |
SavantIC |
Silicon power Transistor | |
4 | 2SC3041 |
INCHANGE |
NPN Transistor | |
5 | 2SC3041 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC3042 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |