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2SC2611 |
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| Part Number | 2SC2611 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP... |
| Features |
down Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE= 10μA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA; IB= 2mA
ICEO
Collector Cutoff Current
VCE= 250V; RBE= ∞
hFE
DC Current Gain
IC= 20mA ; VCE= 20V
fT
Current-Gain—Bandwidth Product
IC= 20mA ; VCE= 20V
COB
Output Capacitance
IE= 0; VCB= 20V,ftest= 1MHz
2SC2611
MIN TYP. MAX UNIT
300
V
300
V
5
V
1.5
V
1
μA
30
200
80
MHz
4
pF
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein ... |
| Document |
 2SC2611 Data Sheet
PDF 187.18KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2610 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Transistor |
|
| 2 | 2SC2610 |
Renesas |
Silicon NPN Triple Diffused Transistor |
|
| 3 | 2SC2611 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC2611 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC2611 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 6 | 2SC2612 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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