2SC2565 |
Part Number | 2SC2565 |
Manufacturer | INCHANGE |
Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1095 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
Features |
age IC= 5A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE 1
DC Current Gain
IC= 1A; VCE= 5V
hFE 2
DC Current Gain
IC= 5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= 1A; VCE= 10V
hFE 1 Classifications
K
O
Y
55-110 80-160 120-240
2SC2565
MIN TYP. MAX UNIT
160
V
2.0
V
5
μA
5
μA
55
240
40
200
pF
25
MHz
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained her... |
Document |
2SC2565 Data Sheet
PDF 216.65KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC2561 |
Panasonic Semiconductor |
Silicon NPN Epitaxial Planar Transistor | |
2 | 2SC2562 |
INCHANGE |
NPN Transistor | |
3 | 2SC2562 |
Toshiba |
Silicon NPN Transistor | |
4 | 2SC2562 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC2563 |
Toshiba |
Silicon NPN Transistor | |
6 | 2SC2563 |
INCHANGE |
NPN Transistor |